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силицијум

The most common semiconductor, atomic number 14, energy gap Eg=1. 12 ev-indirect bandgap; crystal structure- diamond, lattice constant 0. 543 nm, atomic concentration 5x1022 atoms/cm, index of refraction 3. 42, density2. 33 g/cm3, dielectric constant 11. 7, intrinsic carrier concentration 1. 02x1010cm-3, mobility of electrons and holes at 300º K: 1450 and 500 cm2/V-s, thermal conductivity 1. 31 W/cmºc,thermal expansion coefficient 2. 6x10-6 ºc-1, melting point 1414ºc; excellent mechanical properties (MEMS applications); single crystal Si can be processed into wafers up to 300mm in diameter.

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аморфни силицијум
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Semiconductor in which the concentration of electrons is much higher than the concentration of holes (p>>n); electrons are majority carriers and dominate conductivity.

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The common method used to deposit thin-film materials; material to be deposited is heated in a vacuum (10-6, 10-7 Torr range) until it melts and starts evaporating; this vapor ...

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A measure of the ease with which charge carriers flow in a material; the reciprocal of resistivity.

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Semiconductors; Silicon wafer

Solid featuring periodic spatial arrangement of atoms throughout the entire piece of material.

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